Manufacturer Part Number
NAND128W3A2BN6E
Manufacturer
Micron Technology
Introduction
This product is a 128Mbit NAND FLASH memory chip designed for advanced data storage solutions, offering a parallel memory interface for high speed data access and write operations.
Product Features and Performance
Memory Type: Non-Volatile FLASH
Memory Format: NAND
High-speed memory access and write operations
Memory Size: 128Mbit
Organization: 16M x 8
Write Cycle Time: 50ns
Access Time: 50ns
Surface Mount technology
Operates across a voltage range of 2.7V to 3.6V
Product Advantages
Retains data without power
Large memory capacity in compact format
Key Technical Parameters
Memory Size: 128Mbit
Write Cycle Time Word, Page: 50ns
Access Time: 50 ns
Voltage Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Quality and Safety Features
Reliable operation in extreme temperatures from -40°C to 85°C
Compatibility
Interface compatibility with systems requiring a parallel memory interface
Application Areas
Can be used in various digital devices requiring high-speed, reliable data storage and retrieval
Product Lifecycle
Status: Obsolete
Availability of replacements or upgrades should be checked with Micron Technology or distributors due to the obsolescence of this model
Several Key Reasons to Choose This Product
Non-volatile storage provides data security in power-off scenarios
High memory capacity accommodating large amounts of data
Fast access and write speeds enhance device performance
Robust against extreme environmental conditions
Ideal for specialized digital applications requiring legacy parallel interfaces