Manufacturer Part Number
MT29E512G08CEHBBJ4-3
B
Manufacturer
Micron Technology
Introduction
The MT29E512G08CEHBBJ4-3:B is a high-capacity NAND flash memory chip manufactured by Micron Technology. It offers a storage capacity of 512Gbit with a parallel memory interface, making it suitable for a wide range of embedded applications that require reliable and high-density non-volatile memory.
Product Features and Performance
512Gbit NAND flash memory
Parallel memory interface operating at up to 333MHz
5V ~ 3.6V operating voltage range
0°C to 70°C operating temperature range
132-VBGA package with a 12x18mm footprint
Product Advantages
High storage capacity for data-intensive applications
Fast parallel interface for efficient data transfer
Wide operating voltage and temperature range for versatile use
Compact and space-efficient package design
Key Reasons to Choose This Product
Reliable and proven NAND flash technology from a leading manufacturer
Scalable storage capacity to meet evolving application needs
Optimized performance and power efficiency for embedded systems
Extensive compatibility and suitability for a wide range of applications
Quality and Safety Features
Rigorous quality control and testing processes
Compliance with industry standards and safety regulations
Compatibility
The MT29E512G08CEHBBJ4-3:B is compatible with a wide range of embedded systems and devices that require high-density non-volatile memory.
Application Areas
Industrial automation and control systems
Automotive electronics and infotainment systems
Networking and telecommunications equipment
Medical and healthcare devices
Consumer electronics and IoT applications
Product Lifecycle
The MT29E512G08CEHBBJ4-3:B is an obsolete product, meaning it is no longer in active production. However, there may be equivalent or alternative models available from Micron or other memory manufacturers. Customers are advised to contact our website's sales team for more information on available options and product lifecycle status.