MT29E1T208ECHBBJ4-3:B - Micron Technology Inc.

Manufacturer Part Number

MT29E1T208ECHBBJ4-3

B

Manufacturer

Micron Technology

Introduction

This product is a high-capacity, high-performance NAND flash memory chip designed for a wide range of applications, including mobile devices, solid-state drives (SSDs), and embedded systems. With its large storage capacity and advanced features, it offers excellent reliability, efficiency, and performance.

Product Features and Performance

125Tbit of non-volatile memory storage

NAND flash memory technology

144G x 8 memory organization

Parallel memory interface

5V ~ 3.6V operating voltage

Operating temperature range of 0°C to 70°C

132-VBGA package with a 12x18 footprint

Product Advantages

High-density storage capacity for data-intensive applications

Efficient power consumption for enhanced battery life in mobile devices

Reliable and durable non-volatile memory solution

Compatibility with a wide range of systems and devices

Key Reasons to Choose This Product

Unparalleled storage capacity for data-rich applications

Exceptional performance and energy efficiency

Proven reliability and durability for long-term usage

Seamless integration with a variety of systems and devices

Quality and Safety Features

Rigorous quality control and testing processes

Compliance with industry standards and regulations

Robust design for reliable and safe operation

Compatibility

This product is designed to be compatible with a wide range of devices and systems that require high-capacity, non-volatile memory.

Application Areas

Mobile devices (smartphones, tablets, etc.)

Solid-state drives (SSDs) for computers and servers

Embedded systems and industrial applications

Other data-intensive devices and applications

Product Lifecycle

This product is currently in the obsolete phase, meaning it is no longer actively manufactured or widely available. Customers are advised to contact our website's sales team for information on equivalent or alternative products that may be available.