Manufacturer Part Number
MT29E3T08EUHBBM4-3:B
Manufacturer
micron-technology
Introduction
Micron Technology's MT29E3T08EUHBBM4-3:B is a 3Tbit FLASH memory device, employing NAND technology for durable and reliable non-volatile storage solutions.
Product Features and Performance
Uses FLASH - NAND technology
3Tbit memory size for extensive data storage
Memory organized into 384G x 8 for efficient access
Parallel memory interface supports higher data transfer rates
Supports clock frequencies up to 333 MHz for swift operations
Product Advantages
High storage capacity meets demanding data storage needs
NAND technology ensures durability and reliability
Parallel interface provides faster data transmission
Wide operating temperature range from 0°C to 70°C ensures reliability under various conditions
Support for a wide range of supply voltages (2.5V ~ 3.6V) enhances compatibility
Key Technical Parameters
Memory Type: Non-Volatile
Memory Format: FLASH
Memory Size: 3Tbit
Memory Organization: 384G x 8
Memory Interface: Parallel
Clock Frequency: 333 MHz
Voltage - Supply: 2.5V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Quality and Safety Features
Non-volatile memory technology ensures data persistence without power
Designed for a wide range of operating conditions, enhancing device safety and reliability
Compatibility
Supports a wide range of supply voltages for broad compatibility with other circuit components
Parallel interface enables integration with a variety of systems and applications
Application Areas
Ideal for high-capacity data storage needs in computing, mobile, and industrial applications
Suitable for use in environments requiring reliable data retention and quick access
Product Lifecycle
Product Status: Obsolete
As a discontinued model, it is crucial to consider future availability, potential replacements, or upgrades for long-term projects.
Several Key Reasons to Choose This Product
Extensive 3Tbit storage capacity fulfills advanced data storage requirements
NAND FLASH technology offers durability and long-term reliability
Parallel interface ensures rapid data transfer speeds
Wide voltage and temperature operating ranges enhance device compatibility and use in diverse environments
Obsolescence status necessitates careful consideration for critical applications, emphasizing the need for strategic planning regarding stock and future alternatives