Manufacturer Part Number
APT10035JLL
Manufacturer
Microchip Technology
Introduction
High-voltage, high-power N-channel MOSFET transistor
Product Features and Performance
Drain to source voltage (Vdss) of 1000 V
Continuous drain current (Id) of 25 A at 25°C
On-state resistance (Rds(on)) of 350 mΩ at 14 A, 10 V
Input capacitance (Ciss) of 5185 pF at 25 V
Power dissipation (Ptot) of 520 W at 25°C
Product Advantages
High voltage and current handling capability
Low on-state resistance for efficient power conversion
Suitable for high-power switching applications
Key Technical Parameters
Drain to source voltage (Vdss): 1000 V
Gate to source voltage (Vgs): ±30 V
On-state resistance (Rds(on)): 350 mΩ
Continuous drain current (Id): 25 A
Input capacitance (Ciss): 5185 pF
Power dissipation (Ptot): 520 W
Quality and Safety Features
RoHS3 compliant
Suitable for chassis mount applications
Operating temperature range: -55°C to 150°C
Compatibility
SOT-227-4, miniBLOC package
Compatible with POWER MOS 7 series
Application Areas
High-power switching applications
Power conversion and control circuits
Industrial and automotive electronics
Product Lifecycle
This product is currently available and not nearing discontinuation.
Replacement or upgrade options may be available in the POWER MOS 7 series.
Key Reasons to Choose This Product
High voltage and current handling capabilities
Low on-state resistance for efficient power conversion
Suitable for high-power switching applications
RoHS3 compliant and suitable for chassis mount
Wide operating temperature range of -55°C to 150°C