Manufacturer Part Number
APT10043JVR
Manufacturer
Microsemi
Introduction
High-voltage, high-power N-channel MOSFET
Product Features and Performance
Drain to Source Voltage (Vdss) of 1000 V
On-resistance (Rds(on)) of 430 mΩ at 500 mA, 10 V
Continuous Drain Current (Id) of 22 A at 25°C
Input Capacitance (Ciss) of 9000 pF at 25 V
Gate Charge (Qg) of 480 nC at 10 V
MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) technology
Product Advantages
High voltage and power handling capabilities
Low on-resistance for efficient power conversion
Suitable for high-power, high-voltage applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 1000 V
On-resistance (Rds(on)): 430 mΩ @ 500 mA, 10 V
Continuous Drain Current (Id): 22 A @ 25°C
Input Capacitance (Ciss): 9000 pF @ 25 V
Gate Charge (Qg): 480 nC @ 10 V
FET Type: N-Channel
Quality and Safety Features
RoHS compliant
Hermetically sealed ISOTOP package
Compatibility
Chassis mount package (SOT-227-4, miniBLOC)
Application Areas
High-power, high-voltage applications such as power supplies, motor drives, and industrial equipment
Product Lifecycle
Current production model, no indication of discontinuation
Key Reasons to Choose This Product
High voltage and current handling capabilities
Low on-resistance for efficient power conversion
Reliable ISOTOP package for harsh environments
Suitable for a wide range of high-power, high-voltage applications
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