Manufacturer Part Number
APT10045JFLL
Manufacturer
Microchip Technology
Introduction
High-voltage N-Channel MOSFET
Product Features and Performance
Drain to Source Voltage (Vdss) of 1000 V
On-Resistance (Rds On) of 460 mOhm @ 11.5 A, 10 V
Continuous Drain Current (Id) of 21 A @ 25°C
Input Capacitance (Ciss) of 4350 pF @ 25 V
Gate Charge (Qg) of 154 nC @ 10 V
Threshold Voltage (Vgs(th)) of 5 V @ 2.5 mA
Product Advantages
High breakdown voltage for high-voltage applications
Low on-resistance for efficient power conversion
High current capability for demanding applications
Key Technical Parameters
MOSFET technology
N-Channel FET type
ISOTOP package
Quality and Safety Features
RoHS3 compliant
Chassis mount package for reliable thermal performance
Compatibility
Suitable for a variety of high-voltage, high-power applications
Application Areas
Switch-mode power supplies
Motor drives
Welding equipment
Industrial automation and control
Product Lifecycle
Current production model, no plans for discontinuation
Replacements and upgrades available as technology advances
Key Reasons to Choose This Product
Exceptional high-voltage and high-current capabilities
Efficient power conversion with low on-resistance
Reliable and thermally-efficient package design
Compliance with relevant safety and environmental standards
