Manufacturer Part Number
UCC27712DR
Manufacturer
Texas Instruments
Introduction
High-speed, high-current gate driver for IGBTs and MOSFETs
Product Features and Performance
Operates from 10V to 20V supply voltage
Independent dual-channel gate driver
Capable of driving both N-Channel and P-Channel MOSFETs, as well as IGBTs
Fast rise and fall times (16ns and 10ns respectively)
High peak output current (1.8A source, 2.8A sink)
Max bootstrap voltage of 600V
Product Advantages
Enables high-speed and high-efficiency power conversion
Provides reliable and robust gate driving for power semiconductor devices
Compact 8-SOIC package
Key Technical Parameters
Operating temperature range: -40°C to 125°C
Packaging: 8-SOIC, Tape & Reel
Quality and Safety Features
RoHS3 compliant
Compatibility
Suitable for driving IGBTs, N-Channel and P-Channel MOSFETs
Application Areas
Switch-mode power supplies
Inverters
Motor drives
Industrial and medical equipment
Product Lifecycle
Active product, no discontinuation or replacement plans known
Key Reasons to Choose This Product
High-speed and high-current gate driving capability
Supports a wide range of power semiconductor devices
Compact and space-efficient packaging
Robust operation over wide temperature range
RoHS3 compliance for environmental safety