Manufacturer Part Number
UCC27710DR
Manufacturer
Texas Instruments
Introduction
UCC27710DR is a high performance gate driver designed for power management applications, particularly suitable for driving Half-Bridge, IGBT, and MOSFET gates.
Product Features and Performance
Drives 2 synchronous channels
Compatible with IGBT, N-Channel, and P-Channel MOSFET gate types
Operating voltage between 10V and 20V
Peak output current of 500mA (source), 1A (sink)
Rapid rise and fall times of 40ns and 20ns respectively
High side voltage can withstand up to 600V
Operates within a temperature range of -40°C to 125°C
Product Advantages
Dual channel operation for efficiency
High peak current capability for robust drive strength
Fast switching speeds enhance overall system performance
Wide operational temperature range ensures reliability in various environments
Key Technical Parameters
Supply Voltage: 10V ~ 20V
Logic Voltage VIL, VIH: 1.5V, 1.6V
Current Peak Output (Source, Sink): 500mA, 1A
High Side Voltage Max (Bootstrap): 600V
Rise / Fall Time (Typ): 40ns, 20ns
Operating Temperature: -40°C ~ 125°C
Quality and Safety Features
Robust thermal management supports a wide operating temperature range
Compatibility
Suitable for driving IGBT, N-Channel, and P-Channel MOSFET gates
Application Areas
Industrial motor drives
Power supply units
Renewable energy systems
Electronic appliances with power management requirements
Product Lifecycle
Currently active
No indication of nearing discontinuation
Several Key Reasons to Choose This Product
Efficient dual channel operation helps optimize system performance
High voltage tolerance of up to 600V for high side applications
Very low rise and fall times enhance switching performance
Capable of operating under a wide range of environmental conditions
Reliable Texas Instruments manufacturing ensures product quality and durability