Manufacturer Part Number
UCC27710D
Manufacturer
Texas Instruments
Introduction
Gate driver for power management applications, optimized for driving half-bridges
Product Features and Performance
Drives IGBT and MOSFET gates
Synchronous half-bridge configuration
Two output drivers
High side voltage capability up to 600V
Fast rise and fall times of 40ns/20ns
Operates across a wide temperature range from -40°C to 125°C
Product Advantages
High-current drive capability with peak output of up to 1A
Dual outputs allow for efficient control of both high-side and low-side switches
Integrated under-voltage lockout feature for improved safety
Key Technical Parameters
Supply Voltage between 10V and 20V
Logic Threshold VIL at 1.5V and VIH at 1.6V
Current - Peak Output: Source 500mA, Sink 1A
High Side Voltage - Max (Bootstrap): 600V
Quality and Safety Features
Extended temperature range ensures reliability under varying environmental conditions
Robust against negative transients for enhanced durability
Compatibility
Compatible with IGBT and both N-Channel and P-Channel MOSFETs
Can be used in conjunction with a variety of power semiconductor devices
Application Areas
Motor control
Switch mode power supplies
Power inverters and converters
Industrial automation systems
Product Lifecycle
Active product with ongoing support
Not indicated as nearing discontinuation from the available information
Several Key Reasons to Choose This Product
Robust driver capability for high voltage and current applications
Efficient thermal and electrical performance for improved power efficiency
Compact 8-SOIC package suitable for space-constrained designs
Broad compatibility with a range of power semiconductor devices
Texas Instruments' reputation for reliable and durable components