UCC27211DR - Texas Instruments

Manufacturer Part Number

UCC27211DR

Manufacturer

Texas Instruments

Introduction

High-speed half-bridge gate driver for N-Channel MOSFET power stages

Product Features and Performance

Independent half-bridge gate driver

Dual-driver configuration

Support for high-side N-Channel MOSFET

4A peak source and sink current capacity

Non-inverting input logic

Rise time typically 7.2ns, fall time typically 5.5ns

Wide supply voltage range from 8V to 17V

Low logic threshold voltages for easy interfacing

Product Advantages

High current driving capability for large MOSFETs

Fast switching for improved power efficiency

Robust operational temperature range

Integrated under-voltage lockout for system reliability

High bootstrap voltage up to 120V for high-side drive

Key Technical Parameters

Supply Voltage: 8V to 17V

Logic Voltage VIL, VIH: 1.3V, 2.7V

Peak Output Current: 4A Source, 4A Sink

High Side Voltage (Bootstrap): Up to 120 V

Rise/Fall Time: 7.2ns/5.5ns

Quality and Safety Features

Thermal shutdown protection

Under-Voltage Lockout (UVLO) for safe operation

Over-temperature protection

Compatibility

Optimized for N-Channel MOSFETs

Works effectively with microcontrollers and digital signal processors

Application Areas

DC-DC Converters

Motor Controls

Power Supplies

Inverters and E-Bikes

Product Lifecycle

Active status

Not nearing discontinuation

Availability of replacements or upgrade paths

Several Key Reasons to Choose This Product

High integration facilitating compact designs

Efficient power management with reduced switching losses

Capable of driving high-voltage and high-current power stages

Suitable for a wide range of high-performance applications

Proven reliability and support from Texas Instruments

Availability in Tape & Reel packaging for automated assembly processes

Surface Mount 8-SOIC packaging for space-efficient PCB layouts