UCC27212DPRR - Texas Instruments

Manufacturer Part Number

UCC27212DPRR

Manufacturer

Texas Instruments

Introduction

High-speed half-bridge gate driver

Product Features and Performance

Peak Output Current 4A Source, 4A Sink

Low Rise and Fall Times (Typically 7.8ns/6ns)

Wide Supply Voltage Range (7V to 17V)

Robust 3.5V to 18V Gate Drive Voltage (VDD)

Independent High-Side and Low-Side Drivers

Wide Operating Temperature Range (-40°C to 140°C)

Product Advantages

High-current drive capability

Fast switching speeds to optimize power efficiency

Dual-channel design for driving N-channel MOSFETs in half-bridge configurations

High-side bootstrap circuit capable of up to 120V

Key Technical Parameters

Number of Drivers: 2

Driven Configuration: Half-Bridge

Gate Type: N-Channel MOSFET

Logic Voltage - VIL, VIH: 1.6V, 2.3V

High Side Voltage - Max (Bootstrap): 120V

Current - Peak Output (Source, Sink): 4A, 4A

Input Type: Non-Inverting

Operating Temperature Range: -40°C to 140°C

Quality and Safety Features

Reliable performance in a wide range of temperature conditions

Enhanced ruggedness against high voltage transients

Built-in fault protection features

Compatibility

Compatible with surface mount technology

Suitable for use with N-Channel MOSFETs in a variety of switching applications

Application Areas

DC to AC Power Inverters

Solar Inverter Power Stages

Motor Control Circuits

Power Supplies

High Power Density Applications

Product Lifecycle

Active

Standard lifecycle with ongoing support and production

Several Key Reasons to Choose This Product

High efficiency for power conversion applications

Strong drive capability improves overall system reliability

Integrated bootstrap diode reduces external components count

Optimized for high-frequency operation to reduce switching losses

Supports high-side and low-side driver configurations for design flexibility

Excellent thermal performance with exposed pad package

Industry-leading quality and support from Texas Instruments