Manufacturer Part Number
UCC27211AQDDARQ1
Manufacturer
Texas Instruments
Introduction
High-speed, half-bridge gate driver for N-Channel MOSFET power switches
Product Features and Performance
High peak output current 4A source and sink
Independent half-bridge driver channels
8V to 17V supply voltage
2V (VIL) and 2.55V (VIH) logic thresholds
High side voltage up to 120V (bootstrap)
Fast rise and fall times of 7.2ns/5.5ns
Non-inverting input type
Automotive qualified AEC-Q100
Product Advantages
Robust drive capability for demanding applications
Flexible for various power supply ranges
Quick switching transitions for improved efficiency
High voltage handling for high-side switching applications
Built-in protection features for enhanced reliability
Key Technical Parameters
Driven Configuration: Half-Bridge
Channel Type: Independent
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Voltage - Supply: 8V ~ 17V
Logic Voltage - VIL, VIH: 1.2V, 2.55V
Current - Peak Output: 4A, 4A
High Side Voltage - Max: 120 V
Rise / Fall Time: 7.2ns, 5.5ns
Operating Temperature: -40°C ~ 140°C
Quality and Safety Features
Extended temperature range for automotive use
Complies with AEC-Q100 automotive standard
ESD protection and latch-up immunity
Compatibility
Compatible with N-Channel MOSFET gate driving
Ideal for various half-bridge configurations
Supports surface mount technology with PowerSOIC package
Application Areas
Automotive powertrain systems
DC to AC inverters for electric vehicles
Brushless DC motor drives
High power density power supplies
Product Lifecycle
Active product status
Not indicated as nearing discontinuation
Several Key Reasons to Choose This Product
Dual independent channels for flexible circuit design
High peak output drive current suitable for high-power applications
Fast switching for higher efficiency and reduced heat
Robust thermal performance for harsh automotive environments
Compliant with strict automotive industry standards