TPS28226DRBT - Texas Instruments

Manufacturer Part Number

TPS28226DRBT

Manufacturer

Texas Instruments

Introduction

TPS28226DRBT is a high-performance half-bridge gate driver designed for synchronous N-Channel MOSFETs, suitable for a variety of power management applications.

Product Features and Performance

Supports half-bridge and synchronous channel configuration

Designed for N-Channel MOSFET gate driving

Supply voltage range from 6.8V to 8.8V

High side voltage up to 33V (Bootstrap)

Rise and fall times as fast as 10ns

Operates from -40°C to 125°C

Surface mount package (8-VDFN Exposed Pad)

Product Advantages

Fast switching times enhance efficiency

Robust thermal performance in a compact 8-SON package

Ability to drive high side voltages up to 33V provides flexibility in applications

Key Technical Parameters

Number of Drivers: 2

Voltage - Supply: 6.8V ~ 8.8V

High Side Voltage - Max (Bootstrap): 33 V

Rise / Fall Time (Typ): 10ns, 10ns

Operating Temperature: -40°C ~ 125°C (TJ)

Quality and Safety Features

Robust operating temperature range ensuring reliability in various environments

Compatibility

Compatible with N-Channel MOSFET configurations ensuring versatility in circuit designs

Application Areas

Designed for power management in consumer electronics, automotive, and industrial applications

Product Lifecycle

Status: Last Time Buy

Note: Check for replacements or upgrade options due to nearing discontinuation

Several Key Reasons to Choose This Product

Optimized for high-efficiency power management applications

Extremely fast switching capabilities reduce power losses

High thermal and voltage handling capabilities enhance system reliability

Versatile compatibility with various MOSFET configurations

Compact and robust package suitable for dense PCB layouts