Manufacturer Part Number
TPS28225TDRQ1
Manufacturer
Texas Instruments
Introduction
High-speed MOSFET gate driver designed for automotive and industrial applications.
Product Features and Performance
Dual-channel synchronous driver
Capable of driving N-Channel MOSFETs
Peak output current of 2A on both source and sink sides
Fast rise and fall times of 10ns
Supported supply voltage range of 4.5V to 8.8V
Non-inverting input configuration
High-side voltage up to 33V for bootstrap applications
Operates reliably in a temperature range of -40°C to 125°C
Product Advantages
AEC-Q100 qualified for automotive reliability
Compact 8-SOIC package
Optimized for fast-switching applications
Suitable for high-frequency power converters
Low power consumption
Key Technical Parameters
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Input Logic Voltage Thresholds: VIL 0.8V, VIH 2.1V
High Side Voltage - Max (Bootstrap): 33V
Quality and Safety Features
AEC-Q100 automotive qualification
Thermal shutdown protection
Under-voltage lockout (UVLO)
Compatibility
Compatible with N-Channel MOSFETs
Can be used in conjunction with standard microcontrollers or digital signal processors
Application Areas
Automotive Powertrain Systems
DC/DC Converters
Motor Drives
Power Management Units
Product Lifecycle
Active status, not reported as nearing discontinuation
Availability of future upgrades and replacements is likely given active status
Several Key Reasons to Choose This Product
Meets stringent automotive qualification standards for robustness and reliability
Highly efficient switching characteristics ideal for power-sensitive applications
Support for a wide range of supply voltages enhances flexibility in design
Fast response time benefits high-speed operation and reduces transition losses
Integrated safety features ensure protection in fault conditions
Easy to mount surface mount 8-SOIC package saves PCB space
Designed by Texas Instruments, a leader in semiconductor solutions