Manufacturer Part Number
TPS28226DRBR
Manufacturer
Texas Instruments
Introduction
The TPS28226DRBR is a 2-channel N-channel MOSFET gate driver IC designed for use in high-frequency, high-power density power conversion applications.
Product Features and Performance
Operates from a 6.8V to 8.8V supply voltage
Drives two N-channel MOSFETs in a half-bridge configuration
Fast rise and fall times of 10ns typical
Supports up to 33V bootstrap voltage for the high-side MOSFET
Integrated level-shifting and bootstrap diode
Product Advantages
Efficient power conversion with fast switching capabilities
Compact 8-SON (3x3) package for space-constrained designs
Wide operating temperature range of -40°C to 125°C
Key Technical Parameters
Operating Voltage Range: 6.8V to 8.8V
Operating Temperature Range: -40°C to 125°C
Rise/Fall Time (Typ): 10ns, 10ns
High Side Voltage Max (Bootstrap): 33V
Number of Drivers: 2
Driven Configuration: Half-Bridge
Quality and Safety Features
RoHS3 compliant
Surface mount packaging for reliable operation
Compatibility
The TPS28226DRBR is compatible with a wide range of N-channel MOSFETs commonly used in power conversion applications.
Application Areas
High-frequency, high-power density power converters
Switching power supplies
Motor drives
Industrial automation equipment
Product Lifecycle
The TPS28226DRBR is an active product from Texas Instruments, with no plans for discontinuation. Replacement or upgrade options may be available as technology evolves.
Key Reasons to Choose This Product
Efficient and high-performance gate driving capabilities
Compact package for space-constrained designs
Wide operating temperature range for harsh environments
Proven reliability and RoHS3 compliance
Compatibility with a wide range of N-channel MOSFETs