Manufacturer Part Number
BQ4013YMA-85
Manufacturer
Texas Instruments
Introduction
Non-Volatile Memory Component
Product Features and Performance
Memory Type Non-Volatile
Memory Format NVSRAM
Technology NVSRAM (Non-Volatile SRAM)
Memory Size 1Mbit
Memory Organization 128K x 8
Memory Interface Parallel
Write Cycle Time 85ns
Access Time 85ns
Product Advantages
Retains data without power
Faster write cycles compared to EEPROMs
Directly replaceable with volatile SRAM
Key Technical Parameters
Voltage Supply 4.5V ~ 5.5V
Operating Temperature 0°C ~ 70°C (TA)
Mounting Type Through Hole
Package / Case 32-DIP Module
Quality and Safety Features
Reliable data retention
Robust physical package
Compatibility
Parallel interface compatible with common microcontrollers
Application Areas
Industrial controls
Telecommunications
Networking hardware
Data retention systems
Product Lifecycle
Obsolete
Potential for replacements or upgrades subject to manufacturer's future offerings
Several Key Reasons to Choose This Product
High-speed read and write operations
Durable and reliable over a wide temperature range
Broad compatibility with existing systems
Ideal for critical data storage applications where power may be unreliable