Manufacturer Part Number
BQ4013MA-85
Manufacturer
Texas Instruments
Introduction
The BQ4013MA-85 is a high-density, non-volatile SRAM (NVSRAM) memory device. It combines the non-volatile storage of EEPROM with the fast read/write access of SRAM, offering a unique solution for applications requiring data backup without the need for a battery.
Product Features and Performance
Memory Size: 1Mbit
Memory Organization: 128K x 8
Memory Interface: Parallel
Write Cycle Time Word, Page: 85ns
Access Time: 85 ns
Voltage Supply: 4.75V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Product Advantages
Non-volatile data storage without the need for a battery
Fast read/write access like SRAM
Seamless transition between volatile and non-volatile states
Eliminates the need for battery backup
Key Reasons to Choose This Product
Reliable data storage and backup without battery
High-density 1Mbit memory capacity
Optimal performance with 85ns write cycle and access time
Wide operating temperature range of 0°C to 70°C
Quality and Safety Features
Robust through-hole 32-DIP package (0.610", 15.49mm)
Tested and qualified for industrial and commercial applications
Compatibility
The BQ4013MA-85 is a direct replacement for older NVSRAM devices, making it a suitable solution for upgrading or replacing existing systems.
Application Areas
Industrial automation and control systems
Data logging and recording devices
Portable electronics with data backup requirements
Embedded systems and IoT devices
Product Lifecycle
The BQ4013MA-85 is now an obsolete product, meaning it is no longer in active production. However, there are several equivalent or alternative models available from Texas Instruments that offer similar or improved features. Customers are advised to contact our website's sales team for more information on suitable replacement options.
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