Manufacturer Part Number
DTC143EKAT146
Manufacturer
LAPIS Technology
Introduction
Discrete NPN bipolar junction transistor (BJT) with pre-biased base
Product Features and Performance
200 mW maximum power
50 V maximum collector-emitter breakdown voltage
100 mA maximum collector current
500 nA maximum collector cutoff current
300 mV maximum collector-emitter saturation voltage at 10 mA collector current
30 minimum DC current gain at 10 mA collector current and 5 V collector-emitter voltage
250 MHz transition frequency
7 kOhm base and emitter-base resistors
Product Advantages
Pre-biased base for easy biasing
High-frequency performance
Compact SMT packaging
Key Technical Parameters
Power rating: 200 mW
Collector-emitter breakdown voltage: 50 V
Collector current: 100 mA
Collector cutoff current: 500 nA
Collector-emitter saturation voltage: 300 mV
DC current gain: 30
Transition frequency: 250 MHz
Base and emitter-base resistors: 4.7 kOhm
Quality and Safety Features
RoHS3 compliant
Compatibility
Surface mount (SMT) package
Tape and reel packaging
Application Areas
General-purpose amplifier and switching applications
Audio and video circuits
Power management circuits
Industrial and consumer electronics
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacement or upgrade options available from the manufacturer
Key Reasons to Choose This Product
Pre-biased base for easy biasing and circuit design
High-frequency performance up to 250 MHz
Compact SMT packaging for space-constrained applications
RoHS3 compliance for environmental responsibility
Availability in tape and reel packaging for efficient manufacturing
DTC143EUPanasonic