DTC143EET1G - onsemi

Manufacturer Part Number

DTC143EET1G

Manufacturer

onsemi

Introduction

The DTC143EET1G is a pre-biased NPN bipolar junction transistor (BJT) designed for use in a variety of electronic circuit applications.

Product Features and Performance

Pre-biased NPN BJT

Low power operation with a maximum power rating of 200 mW

Collector-emitter breakdown voltage of up to 50 V

Collector current up to 100 mA

Very low collector cutoff current of 500 nA (max)

Specific Vce saturation voltage and DC current gain characteristics

Product Advantages

Pre-biased design simplifies circuit design

Compact surface mount package

Suitable for a wide range of applications

Key Technical Parameters

Collector-emitter breakdown voltage: 50 V (max)

Collector current: 100 mA (max)

Collector cutoff current: 500 nA (max)

Vce saturation voltage: 250 mV @ 1 mA, 10 mA

DC current gain: 15 (min) @ 5 mA, 10 V

Base resistor: 4.7 kΩ

Emitter-base resistor: 4.7 kΩ

Quality and Safety Features

RoHS3 compliant

Suitable for reflow soldering in tape and reel packaging

Compatibility

Surface mount package (SC-75, SOT-416)

Application Areas

General-purpose electronic circuits

Amplifier and switching applications

Biasing and load control circuits

Product Lifecycle

Current production product

Replacement or upgrade options available

Key Reasons to Choose This Product

Pre-biased design for simplified circuit implementation

Compact surface mount package for space-constrained applications

Wide operating voltage and current ranges

Reliable performance and RoHS compliance

Availability in standard tape and reel packaging