Manufacturer Part Number
DTC143EM3T5G
Manufacturer
onsemi
Introduction
The DTC143EM3T5G is a pre-biased NPN bipolar junction transistor (BJT) from onsemi, designed for use in a variety of electronic circuits and applications.
Product Features and Performance
Optimized for high-frequency switching applications
Wide collector-emitter breakdown voltage of 50V
High transition frequency of 250MHz
Low collector-emitter saturation voltage of 250mV at 1mA and 10mA collector current
Integrated bias resistors of 4.7kΩ for base and emitter-base
Product Advantages
Compact SOT-723 surface mount package
Excellent high-frequency performance
Built-in biasing for simplified circuit design
RoHS-compliant and lead-free construction
Key Technical Parameters
Power Rating: 260mW
Collector-Emitter Breakdown Voltage (Max): 50V
Collector Current (Max): 100mA
Collector Cutoff Current (Max): 500nA
DC Current Gain (Min): 15 @ 5mA, 10V
Quality and Safety Features
RoHS3 compliant
Tape and reel packaging for automated assembly
Compatibility
Can be used in a wide range of electronic circuits and applications, including:
Switching circuits
Amplifiers
Logic gates
Biasing networks
Application Areas
Consumer electronics
Industrial control
Telecommunications equipment
Medical devices
Product Lifecycle
The DTC143EM3T5G is an active and readily available product from onsemi. There are no indications of it being discontinued or replaced in the near future.
Key Reasons to Choose This Product
Excellent high-frequency performance for efficient switching applications
Integrated biasing resistors for simplified circuit design
Compact surface mount package for space-constrained designs
RoHS compliance and lead-free construction for environmental responsibility
Readily available and actively supported by the manufacturer
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