Manufacturer Part Number
TC58NVG2S0HBAI4
Manufacturer
Toshiba Memory America
Introduction
High-capacity NAND Flash Memory chip for data storage applications
Product Features and Performance
Non-Volatile FLASH memory
SLC NAND technology for higher reliability
Parallel memory interface for rapid data transfer
4Gbit memory size for ample storage space
512M x 8 memory organization for efficient access
25ns Write Cycle Time enhances speed of operations
25ns Access Time for swift data retrieval
Product Advantages
SLC NAND offers better endurance and performance compared to MLC/TLC
Suitable for high-temperature applications (-40°C to 85°C)
Surface mount technology for a secure fit in compact devices
Key Technical Parameters
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Memory Size: 4Gbit
Memory Organization: 512M x 8
Memory Interface: Parallel
Write Cycle Time - Word, Page: 25ns
Access Time: 25 ns
Voltage - Supply: 2.7V to 3.6V
Operating Temperature Range: -40°C to 85°C
Quality and Safety Features
Built for extreme temperature resilience
Compliance with industry standards
Compatibility
Broad compatibility with various electronic systems due to standard voltage supply and parallel interface
Application Areas
Consumer Electronics
Mobile Devices
Solid-State Drives
Data Storage Solutions
Product Lifecycle
Active Product Status
Long-term availability and support from Toshiba Memory America
Several Key Reasons to Choose This Product
High reliability and durability offered by SLC NAND technology
Suitable for demanding environmental conditions
Optimized for quick write and access times
Substantial storage capacity for diverse applications
Commendable compatibility and ease of integration
Supported by solid product availability and manufacturer's reputation
TC58NVG2S0HTA0OTAEC Product (Toshiba Electronic Devices and Stora
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