Manufacturer Part Number
TC58NVG2S0HTAI0
Manufacturer
Toshiba Memory America
Introduction
The TC58NVG2S0HTAI0 is a high-performance 4Gbit NAND FLASH memory device designed for applications requiring non-volatile memory storage.
Product Features and Performance
Non-Volatile FLASH Memory
Memory Size: 4Gbit
NAND Technology (Single-Level Cell SLC)
Memory Organization: 512M x 8
Parallel Memory Interface
Fast Write Cycle Time and Access Time of 25ns
Supply Voltage Range: 2.7V to 3.6V
Product Advantages
High data retention and endurance
Quick access and processing speeds
Secure storage of critical data
Key Technical Parameters
Write Cycle Time Word, Page: 25ns
Access Time: 25ns
Memory Size: 4Gbit
Operating Temperature: -40°C to 85°C (TA)
Voltage Supply: 2.7V to 3.6V
Quality and Safety Features
Operates efficiently across extreme temperature ranges
Durable and reliable flash storage technology
Compatibility
Compatible with various systems requiring parallel interface NAND FLASH memory
Application Areas
Embedded systems
Telecommunication equipment
Consumer electronics
Industrial automation
Product Lifecycle
Currently active product
Not nearing discontinuation
Upgrades available in the TC58NVG series
Several Key Reasons to Choose This Product
High-speed performance and low pin count due to parallel interface
Robust temperature and voltage operational ranges making it suitable for harsh environments
Reliable and high-grade NAND FLASH technology from Toshiba Memory America
Long-term data retention ideal for critical and sensitive applications
A part of widely recognized and reliable TC58NVG series, ensuring consistent updates and support
TC58NVG2S3ETA00TAEC Product (Toshiba Electronic Devices and Stora
TC58NVG1S3HTAI0##QQQQQQQQ