TC58NVG2S0HTAI0 - Kioxia America, Inc.

Manufacturer Part Number

TC58NVG2S0HTAI0

Manufacturer

Toshiba Memory America

Introduction

The TC58NVG2S0HTAI0 is a high-performance 4Gbit NAND FLASH memory device designed for applications requiring non-volatile memory storage.

Product Features and Performance

Non-Volatile FLASH Memory

Memory Size: 4Gbit

NAND Technology (Single-Level Cell SLC)

Memory Organization: 512M x 8

Parallel Memory Interface

Fast Write Cycle Time and Access Time of 25ns

Supply Voltage Range: 2.7V to 3.6V

Product Advantages

High data retention and endurance

Quick access and processing speeds

Secure storage of critical data

Key Technical Parameters

Write Cycle Time Word, Page: 25ns

Access Time: 25ns

Memory Size: 4Gbit

Operating Temperature: -40°C to 85°C (TA)

Voltage Supply: 2.7V to 3.6V

Quality and Safety Features

Operates efficiently across extreme temperature ranges

Durable and reliable flash storage technology

Compatibility

Compatible with various systems requiring parallel interface NAND FLASH memory

Application Areas

Embedded systems

Telecommunication equipment

Consumer electronics

Industrial automation

Product Lifecycle

Currently active product

Not nearing discontinuation

Upgrades available in the TC58NVG series

Several Key Reasons to Choose This Product

High-speed performance and low pin count due to parallel interface

Robust temperature and voltage operational ranges making it suitable for harsh environments

Reliable and high-grade NAND FLASH technology from Toshiba Memory America

Long-term data retention ideal for critical and sensitive applications

A part of widely recognized and reliable TC58NVG series, ensuring consistent updates and support