Manufacturer Part Number
TC58NVG1S3HBAI6
Manufacturer
Toshiba Memory America
Introduction
TC58NVG1S3HBAI6 is a robust 2Gbit SLC NAND flash memory designed for high performance and reliability in data storage applications.
Product Features and Performance
Non-Volatile FLASH Memory
SLC NAND Technology
Memory Size: 2Gbit
Memory Organization: 256M x 8
Parallel Memory Interface
Write Cycle Time - Word, Page: 25ns
Access Time: 25 ns
Product Advantages
Highly durable and reliable for intensive operations
Suitable for demanding applications requiring frequent writing and erasing
Key Technical Parameters
Voltage Supply Range: 2.7V~3.6V
Operating Temperature Range: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 67-VFBGA
Supplier Device Package: 67-VFBGA (6.5x8)
Quality and Safety Features
Operates effectively within a wide range of temperatures and voltage supplies ensuring data integrity and durability.
Compatibility
Compatible with systems requiring high-speed, reliable data storage and retrieval in a compact package size.
Application Areas
Embedded systems
Mobile devices
Networking systems
Product Lifecycle
Status: Active
Regularly updated with no imminent discontinuation
Several Key Reasons to Choose This Product
Reliability in extreme conditions with an operating temperature range of -40°C to 85°C
Fast access and write times improving system performance
Generous memory size of 2Gbit well-suited for complex applications
Energy-efficient with a low voltage supply range
SLC technology enhances endurance and performance over alternative technologies.
TC58NVG1S3ETAI0B3HTAEC Product (Toshiba Electronic Devices and Stora
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