Manufacturer Part Number
TC58NVG1S3HBAI4
Manufacturer
Toshiba Memory America
Introduction
High-density single-level cell NAND flash memory suitable for a wide range of data storage applications
Product Features and Performance
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND (SLC)
Memory Size 2Gbit
Memory Organization 256M x 8
Memory Interface Parallel
High write and erase endurance
Fast write cycle time and access time
Product Advantages
Robust data retention
Fast data read and write speeds
Wide temperature operating range
SLC technology provides higher reliability
Key Technical Parameters
Write Cycle Time - Word, Page 25ns
Access Time 25 ns
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Quality and Safety Features
Built for high reliability and endurance
Tested for a broad temperature range
Compatibility
General compatibility with a broad range of interfaces and systems due to its parallel interface
Application Areas
Embedded systems
Mobile devices
Solid-state drives
Consumer electronics
Product Lifecycle
Active product status
Supported for future design-ins
Several Key Reasons to Choose This Product
Proven reliability of Toshiba memory products
High-speed write cycles and access time for performance-critical applications
Long term data retention and endurance suitable for various environments
Flexible voltage range for broader compatibility
Suitable for demanding applications across a wide range of temperatures
Compact 63-VFBGA packaging for space-constrained designs
Large memory size of 2Gbit in SLC NAND technology for high-quality storage solutions
TC58NVG1S3GTAI0TAEC Product (Toshiba Electronic Devices and Stora
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