TC58NVG1S3HBAI4 - Kioxia America, Inc.

Manufacturer Part Number

TC58NVG1S3HBAI4

Manufacturer

Toshiba Memory America

Introduction

High-density single-level cell NAND flash memory suitable for a wide range of data storage applications

Product Features and Performance

Memory Type Non-Volatile

Memory Format FLASH

Technology FLASH - NAND (SLC)

Memory Size 2Gbit

Memory Organization 256M x 8

Memory Interface Parallel

High write and erase endurance

Fast write cycle time and access time

Product Advantages

Robust data retention

Fast data read and write speeds

Wide temperature operating range

SLC technology provides higher reliability

Key Technical Parameters

Write Cycle Time - Word, Page 25ns

Access Time 25 ns

Voltage - Supply 2.7V ~ 3.6V

Operating Temperature -40°C ~ 85°C (TA)

Quality and Safety Features

Built for high reliability and endurance

Tested for a broad temperature range

Compatibility

General compatibility with a broad range of interfaces and systems due to its parallel interface

Application Areas

Embedded systems

Mobile devices

Solid-state drives

Consumer electronics

Product Lifecycle

Active product status

Supported for future design-ins

Several Key Reasons to Choose This Product

Proven reliability of Toshiba memory products

High-speed write cycles and access time for performance-critical applications

Long term data retention and endurance suitable for various environments

Flexible voltage range for broader compatibility

Suitable for demanding applications across a wide range of temperatures

Compact 63-VFBGA packaging for space-constrained designs

Large memory size of 2Gbit in SLC NAND technology for high-quality storage solutions