Manufacturer Part Number
TC58NVG1S3ETA00
Manufacturer
Kioxia America, Inc.
Introduction
This is a 2Gbit NAND flash memory integrated circuit manufactured by Kioxia America, Inc.
Product Features and Performance
2Gbit of NAND flash memory
256M x 8 memory organization
Parallel memory interface
25ns access time
25ns write cycle time for word and page
Operates at 2.7V to 3.6V
Product Advantages
High-capacity NAND flash memory
Fast access and write speeds
Wide operating voltage range
RoHS3 compliant
Key Technical Parameters
Memory Type: Non-Volatile NAND Flash
Memory Size: 2Gbit
Memory Organization: 256M x 8
Memory Interface: Parallel
Access Time: 25ns
Write Cycle Time: 25ns
Operating Voltage: 2.7V to 3.6V
Operating Temperature: 0°C to 70°C
Quality and Safety Features
RoHS3 compliant
48-TSOP I package
Compatibility
This NAND flash memory is designed for a wide range of applications that require high-capacity, fast, and power-efficient non-volatile memory.
Application Areas
Embedded systems
Consumer electronics
Industrial automation
Data storage devices
Product Lifecycle
This NAND flash memory is an active product and is not nearing discontinuation. Replacement or upgrade options may be available from Kioxia America, Inc.
Key Reasons to Choose This Product
High 2Gbit memory capacity
Fast 25ns access and write speeds
Wide 2.7V to 3.6V operating voltage range
RoHS3 compliance for environmental safety
Reliable performance and compatibility for a wide range of applications
TC58NVG1S3EBA15TAEC Product (Toshiba Electronic Devices and Stora