Manufacturer Part Number
IS43TR16640B-125JBLI
Manufacturer
Integrated Silicon Solution, Inc. (ISSI)
Introduction
This product is a high-performance, low-power DDR3 SDRAM integrated circuit (IC) designed for a wide range of applications.
Product Features and Performance
1Gbit (64M x 16) memory capacity
Operates at 800 MHz clock frequency
20ns access time
15ns write cycle time
Supports 1.425V to 1.575V supply voltage
Operating temperature range of -40°C to 95°C
RoHS3 compliant
Product Advantages
High-density memory for efficient system design
Low power consumption for energy-efficient operation
Wide operating temperature range for use in diverse environments
Reliable and robust performance
Key Technical Parameters
Memory Type: Volatile DDR3 SDRAM
Memory Interface: Parallel
Package: 96-TWBGA (9x13)
Mounting Type: Surface Mount
Quality and Safety Features
RoHS3 compliant for environmental sustainability
Rigorous quality control and testing for reliable operation
Compatibility
This DDR3 SDRAM IC is compatible with a wide range of electronic devices and systems that require high-performance, low-power memory.
Application Areas
Embedded systems
Industrial automation
Communication devices
Consumer electronics
Product Lifecycle
This product is currently in production and actively available. Replacements or upgrades may be released in the future as technology advances.
Key Reasons to Choose This Product
High-density 1Gbit memory capacity for efficient system design
Low-power operation for energy-efficient applications
Wide operating temperature range for use in diverse environments
Reliable and robust performance for mission-critical applications
RoHS3 compliance for environmental sustainability
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IS43TR16512BL-125KBLISSI, Integrated Silicon Solution IncIC DRAM 8GBIT PARALLEL 96TWBGA
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