Manufacturer Part Number
IS43TR16512BL-125KBLI-TR
Manufacturer
Integrated Silicon Solution
Introduction
This DRAM module is a high-speed, high-density memory component designed for advanced computing and storage applications, utilizing DDR3L technology to optimize power efficiency and performance.
Product Features and Performance
Technology: DDR3L SDRAM
Memory Size: 8 Gbit
Memory Organization: 512M x 16
Memory Interface: Parallel
Clock Frequency: 800 MHz
Write Cycle Time Word, Page: 15ns
Access Time: 20 ns
Voltage Supply Range: 1.283V to 1.45V
Operating Temperature Range: -40°C to 95°C
Package Type: 96-TFBGA
Robust error handling and data integrity features
Product Advantages
High-density module supporting large-scale storage needs
Low voltage operation for reduced power consumption
High data transfer rate suitable for advanced computing systems
Wide temperature tolerance making it ideal for harsh environment applications
Key Technical Parameters
Memory Size: 8Gbit
Memory Configuration: 512M x 16
Clock Frequency: 800 MHz
Write Cycle Time: 15ns
Access Time: 20ns
Voltage Supply: 1.283V ~ 1.45V
Operating Temperature: -40°C ~ 95°C
Quality and Safety Features
Rigorous testing across extended temperature ranges
Built with high-quality materials for extended durability
Compliance with international safety standards
Compatibility
Compatible with standard DDR3L enabled devices
Suitable for use with a wide range of microprocessors and controllers
Application Areas
High-performance computing systems
Data centers and server farms
Industrial automation systems
Telecommunication infrastructure
Embedded systems requiring high memory bandwidth
Product Lifecycle
Current status: Active
Not nearing discontinuation, with ongoing support and supply
Availability of future upgrades facilitating longer lifecycle and scalability
Several Key Reasons to Choose This Product
Ensures high-speed data processing capabilities with 800 MHz clock speed
Enhanced power efficiency through DDR3L low voltage technology
Maintains reliability and performance under extreme conditions with robust temperature range
High memory density to support large-scale applications and data-intensive tasks
Ensures compatibility and integration ease with a broad scope of industrial and computing systems