Manufacturer Part Number
IS43TR16640C-125JBLI
Manufacturer
Integrated Silicon Solution
Introduction
High-speed DDR3 SDRAM component for electronic systems
Product Features and Performance
Volatile DDR3 SDRAM memory
1Gbit memory size
64M x 16 memory organization
Parallel memory interface
800 MHz clock frequency
15ns write cycle time for word/page
20ns access time
425V to 1.575V supply voltage
Surface mount 96-TFBGA package
Product Advantages
High-speed data transfer
Large memory size for extensive data management
Robust temperature range for diverse operating conditions
Key Technical Parameters
Memory size: 1Gbit
Clock frequency: 800 MHz
Write cycle time: 15ns
Access time: 20ns
Supply voltage range: 1.425V to 1.575V
Operating temperature: -40°C to 95°C
Quality and Safety Features
Operational over a wide temperature range
Compliant with industry standards for safety and quality
Compatibility
Suitable for applications requiring DDR3 SDRAM technology
Compatible with systems designed for 96-TFBGA package deployment
Application Areas
Computing
Telecommunications
Industrial Systems
Consumer Electronics
Product Lifecycle
Active status
Not nearing discontinuation
Availability of replacements or upgrades may vary
Key Reasons to Choose This Product
Optimized for high-performance computing needs
Persistent data transfer speed enhances system response
Broad compatibility with a range of electronic devices
Broad operating temperature range suitable for harsh conditions
High-quality standards ensuring product reliability
IS43TR16640ED-125KBLI-TRISSI, Integrated Silicon Solution Inc1G, 1.5V, DDR3 w/ ECC, 64Mx16, 1