Manufacturer Part Number
VIO75-06P1
Manufacturer
IXYS Corporation
Introduction
The VIO75-06P1 is a discrete semiconductor product from IXYS Corporation, specifically a transistor in the IGBT (Insulated Gate Bipolar Transistor) module category.
Product Features and Performance
Rated for a maximum power of 208 W
Non-Punch-Through (NPT) IGBT type
Standard input configuration
Single-pack configuration
Input capacitance (Cies) of 2.8 nF @ 25 V
Collector-Emitter breakdown voltage (max) of 600 V
Maximum collector current (Ic) of 69 A
Collector-Emitter saturation voltage (Vce(on)) of 2.8 V @ 15 V, 75 A
Maximum collector current cut-off of 800 A
Product Advantages
Efficient power handling capabilities
Reliable and robust performance
Suitable for a wide range of applications
Key Technical Parameters
Operating temperature range: -40°C to 150°C (TJ)
Packaging: ECO-PAC2
Mounting type: Chassis mount
Quality and Safety Features
No NTC thermistor included
Compatibility
Compatible with the VIO base product line
Application Areas
Suitable for use in power electronics, motor drives, and industrial control applications
Product Lifecycle
Current and available product
Replacements and upgrades may be available within the VIO product family
Key Reasons to Choose This Product
High power handling capability
Robust and reliable performance
Efficient and suitable for various power electronics applications
Compatibility with the VIO product line