Manufacturer Part Number
VIO25-06P1
Manufacturer
IXYS Corporation
Introduction
Discrete Semiconductor Product
Transistor IGBT Module
Product Features and Performance
NPT IGBT Type
Standard Input
Single Configuration
Input Capacitance (Cies) @ Vce: 8 nF @ 25 V
Voltage Collector Emitter Breakdown (Max): 600 V
Current Collector (Ic) (Max): 24.5 A
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 25A
Current Collector Cutoff (Max): 600 A
Operating Temperature: -40°C ~ 150°C (TJ)
Power Max: 82 W
Product Advantages
Efficient power conversion
Wide operating temperature range
High current and voltage capabilities
Key Technical Parameters
IGBT Type: NPT
Input: Standard
Configuration: Single
Input Capacitance (Cies) @ Vce: 8 nF @ 25 V
Voltage Collector Emitter Breakdown (Max): 600 V
Current Collector (Ic) (Max): 24.5 A
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 25A
Current Collector Cutoff (Max): 600 A
Operating Temperature: -40°C ~ 150°C (TJ)
Power Max: 82 W
Quality and Safety Features
Reliable performance within operating temperature range
Robust design for safe operation
Compatibility
Chassis Mount
Application Areas
Power conversion systems
Industrial automation
Renewable energy systems
Product Lifecycle
Current product offering
Replacement and upgrade options available
Key Reasons to Choose This Product
Efficient power conversion
Wide operating temperature range
High current and voltage capabilities
Reliable performance
Robust design for safe operation
Compatibility with chassis mount systems
Suitable for various industrial and renewable energy applications
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