VS-GT175DA120U - Vishay General Semiconductor - Diodes Division

Manufacturer Part Number

VS-GT175DA120U

Manufacturer

Vishay General Semiconductor – Diodes Division

Introduction

This product is a high-power insulated-gate bipolar transistor (IGBT) module from Vishay General Semiconductor's Diodes Division.

Product Features and Performance

Trench IGBT technology

Standard input configuration

Single-chip design

Operating temperature range: -40°C to 150°C (TJ)

Maximum power of 1087 W

Maximum collector-emitter voltage of 1200 V

Maximum collector current of 288 A

Maximum collector-emitter saturation voltage of 2.1 V at 15 V gate-emitter voltage and 100 A collector current

Maximum collector cutoff current of 100 A

Product Advantages

High power density

Efficient heat dissipation

Reliable performance

Compact size

Key Technical Parameters

IGBT Type: Trench

Input: Standard

Configuration: Single

Voltage Collector Emitter Breakdown (Max): 1200 V

NTC Thermistor: No

Current Collector (Ic) (Max): 288 A

Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A

Current Collector Cutoff (Max): 100 A

Mounting Type: Chassis Mount

Quality and Safety Features

RoHS3 compliant

Housed in a SOT-227 package

Compatibility

This IGBT module is designed for use in a wide range of industrial and power electronics applications.

Application Areas

Motor drives

Power inverters

Welding equipment

Uninterruptible power supplies (UPS)

Induction heating systems

Switching power supplies

Product Lifecycle

This product is currently available and there are no plans for discontinuation. Replacement or upgrade options may be available from the manufacturer or authorized distributors.

Key Reasons to Choose This Product

High power density and efficient heat dissipation

Reliable performance and long lifespan

Compact size and easy integration

Compliance with RoHS3 regulations

Compatibility with a wide range of applications