VS-FB190SA10 - Vishay General Semiconductor - Diodes Division

Manufacturer Part Number

VS-FB190SA10

Manufacturer

Vishay General Semiconductor – Diodes Division

Introduction

High-power N-channel MOSFET transistor

Product Features and Performance

High continuous drain current (190A @ 25°C)

Low on-resistance (6.5mOhm max @ 180A, 10V)

High drain-to-source voltage (100V)

Wide operating temperature range (-55°C to 150°C)

High power dissipation (568W @ Tc)

Fast switching speed

Low gate charge (250nC max @ 10V)

High input capacitance (10700pF max @ 25V)

Product Advantages

Excellent thermal performance

High power handling capability

Efficient power conversion

Suitable for high-power, high-current applications

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 100V

Gate-to-Source Voltage (Vgs): ±20V

Drain Current (Id): 190A (continuous @ 25°C)

On-Resistance (Rds(on)): 6.5mOhm max @ 180A, 10V

Power Dissipation (Pd): 568W (@ Tc)

Input Capacitance (Ciss): 10700pF max @ 25V

Gate Charge (Qg): 250nC max @ 10V

Quality and Safety Features

RoHS3 compliant

Designed for high reliability and safety

Compatibility

Suitable for various high-power, high-current applications

Application Areas

Power supplies

Motor drives

Inverters

Converters

Industrial and consumer electronics

Product Lifecycle

Current product, no discontinuation planned

Replacements and upgrades available as needed

Key Reasons to Choose This Product

Excellent thermal management and power handling

High efficiency and fast switching for improved system performance

Reliable and safe operation in high-power applications

Compatibility with a wide range of high-power electronics