Manufacturer Part Number
MIAA20WD600TMH
Manufacturer
IXYS Corporation
Introduction
Discrete Semiconductor Product, IGBT Transistor Module
Product Features and Performance
Three Phase Inverter configuration
NPT IGBT technology
Input: Single Phase Bridge Rectifier
Operating Temperature: -40°C to 125°C
Power Rating: 100 W maximum
Input Capacitance: 900 pF @ 25 V
Collector-Emitter Breakdown Voltage: 600 V
Collector Current: 29 A maximum
Collector-Emitter Saturation Voltage: 2.7 V @ 15 V, 20 A
Collector Cut-off Current: 1.1 mA maximum
Product Advantages
Compact MiniPack2 package
High power density
Wide operating temperature range
Reliable NPT IGBT technology
Key Technical Parameters
IGBT Type: NPT
Package: MiniPack2
Operating Temperature: -40°C to 125°C
Power Rating: 100 W
Voltage and Current Ratings
Quality and Safety Features
NTC Thermistor for temperature monitoring
Chassis mount design for secure installation
Compatibility
Suitable for three-phase inverter applications
Application Areas
Industrial motor drives
Power conversion systems
Renewable energy applications
Product Lifecycle
Current product offering, no discontinuation planned
Replacement or upgrade options available from IXYS
Key Reasons to Choose This Product
Compact and high-power density package
Wide operating temperature range
Reliable NPT IGBT technology
Integrated NTC thermistor for monitoring
Suitable for three-phase inverter applications