Manufacturer Part Number
MIAA10WE600TMH
Manufacturer
IXYS Corporation
Introduction
This product is a discrete semiconductor device in the form of an IGBT (Insulated Gate Bipolar Transistor) module with a three-phase inverter configuration and brake functionality.
Product Features and Performance
NPT (Non-Punch Through) IGBT technology
70W maximum power rating
-40°C to 125°C operating temperature range
450pF input capacitance at 25V
600V maximum collector-emitter breakdown voltage
18A maximum collector current
6V maximum collector-emitter saturation voltage at 15V gate-emitter voltage and 10A collector current
600A maximum collector current cutoff
Chassis mount packaging
Product Advantages
Robust NPT IGBT design
Wide operating temperature range
Compact MiniPack2 package
Integrated three-phase inverter and brake functionality
Key Technical Parameters
IGBT Type: NPT
Configuration: Three Phase Inverter with Brake
Input Capacitance (Cies) @ Vce: 450 pF @ 25 V
Voltage Collector Emitter Breakdown (Max): 600 V
Current Collector (Ic) (Max): 18 A
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 10A
Current Collector Cutoff (Max): 600 A
Quality and Safety Features
NTC thermistor for temperature monitoring
Chassis mount for secure installation
Compatibility
This IGBT module is designed for use in a variety of power conversion and motor control applications.
Application Areas
Inverters
Motor drives
Power converters
Industrial automation
Renewable energy systems
Product Lifecycle
The MIAA10WE600TMH is an actively supported product in the IXYS portfolio. Replacement or upgrade options may be available, but should be verified with the manufacturer.
Several Key Reasons to Choose This Product
Robust NPT IGBT technology for reliable performance
Wide operating temperature range for versatile applications
Compact MiniPack2 package for space-constrained designs
Integrated three-phase inverter and brake functionality for streamlined system integration
NTC thermistor for improved thermal monitoring and safety