Manufacturer Part Number
IXGH6N170A
Manufacturer
IXYS Corporation
Introduction
High-power IGBT (Insulated Gate Bipolar Transistor) suitable for switching and control applications
Product Features and Performance
NPT (Non-Punch Through) IGBT technology
Collector-Emitter Voltage (VCES) of 1700V
Collector Current (IC) of 6A
Low Collector-Emitter Saturation Voltage (VCE(sat))
Fast Switching Characteristics
Low Gate Charge (Qg)
Wide Operating Temperature Range (-55°C to 150°C)
Product Advantages
Efficient power conversion and control
High voltage and current handling capability
Reliable and robust performance
Suitable for high-power applications
Key Technical Parameters
Collector-Emitter Voltage (VCES): 1700V
Collector Current (IC): 6A
Collector-Emitter Saturation Voltage (VCE(sat)): 7V @ 15V, 3A
Gate Charge (Qg): 18.5nC
Pulse Collector Current (ICM): 14A
Switching Energy (Eon/Eoff): 590μJ/180μJ
Switching Time (Td(on/off)): 46ns/220ns
Quality and Safety Features
RoHS3 Compliant
TO-247AD Package
Compatibility
Suitable for a wide range of power electronic applications
Application Areas
Motor drives
Power supplies
Inverters
Welding equipment
Industrial controls
Product Lifecycle
This product is currently available and not nearing discontinuation.
Replacement or upgraded products may be available in the future.
Several Key Reasons to Choose This Product
High voltage and current handling capability
Fast and efficient switching performance
Reliable and robust design for harsh environments
Suitable for a wide range of high-power applications
RoHS3 compliance for environmental sustainability