Manufacturer Part Number
IXGH60N60B2
Manufacturer
IXYS Corporation
Introduction
Discrete Semiconductor Product
Transistors IGBTs Single
Product Features and Performance
TO-247AD package
HiPerFAST series
Operating temperature range: -55°C to 150°C (TJ)
Maximum power: 500 W
IGBT type: PT
Collector-emitter breakdown voltage (max): 600 V
Collector current (max): 75 A
Collector-emitter saturation voltage (max): 1.8 V @ 15 V, 50 A
Gate charge: 170 nC
Pulsed collector current (max): 300 A
Turn-on/off delay time: 28 ns / 160 ns
Through-hole mounting
Product Advantages
High power handling capability
Fast switching performance
Reliable and robust design
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 600 V
Current Collector (Ic) (Max): 75 A
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
Gate Charge: 170 nC
Current Collector Pulsed (Icm): 300 A
Td (on/off) @ 25°C: 28ns/160ns
Quality and Safety Features
Designed for reliable and safe operation
Suitable for high-power, high-frequency applications
Compatibility
Compatible with a wide range of industrial and power electronics applications
Application Areas
Power conversion and control systems
Motor drives
Inverters
Uninterruptible power supplies (UPS)
Welding equipment
Induction heating
Other high-power, high-frequency applications
Product Lifecycle
This product is currently available and not nearing discontinuation
Replacement or upgrade options may be available from the manufacturer
Several Key Reasons to Choose This Product
High power handling capability up to 500 W
Fast switching performance with short turn-on/off delay times
Reliable and robust design for demanding industrial applications
Compatibility with a wide range of power electronics systems
Availability and potential for replacement or upgrade options