Manufacturer Part Number
IXGH60N60C3D1
Manufacturer
IXYS Corporation
Introduction
High-performance IGBT transistor suitable for various power conversion and control applications.
Product Features and Performance
Wide operating temperature range of -55°C to 150°C
High power rating of 380W
Fast switching with 21ns turn-on and 70ns turn-off times
Low conduction losses with 2.5V collector-emitter voltage drop
High current capability of 75A continuous, 300A pulsed
Product Advantages
Efficient power conversion with low switching and conduction losses
Reliable operation in harsh environments
Compact and easy to integrate design
Key Technical Parameters
IGBT type: PT (Punch-Through)
Collector-emitter breakdown voltage: 600V
Collector current: 75A continuous, 300A pulsed
Gate charge: 115nC
Switching energy: 800J (on), 450J (off)
Quality and Safety Features
RoHS3 compliant
TO-247AD package for reliable thermal performance
Compatibility
This IGBT is suitable for use in various power conversion and control applications, such as motor drives, power supplies, and inverters.
Application Areas
Industrial motor drives
Uninterruptible power supplies (UPS)
Solar inverters
Welding equipment
Other power electronics applications
Product Lifecycle
The IXGH60N60C3D1 is an active product and there are no plans for discontinuation. Replacement or upgrade options may be available from the manufacturer.
Key Reasons to Choose This Product
High power density and efficiency for improved system performance
Reliable and rugged design for operation in harsh environments
Easy integration and compatibility with various power electronics applications
Availability of technical support and resources from the manufacturer
IXGH56N60B3IXYSDISC IGBT PT-MID FREQUENCY TO-24