IXGA20N120B3 - IXYS

Manufacturer Part Number

IXGA20N120B3

Manufacturer

IXYS Corporation

Introduction

Discrete Semiconductor Product

Transistors IGBTs Single

Product Features and Performance

RoHS3 Compliant

TO-263AA package

GenX3 series

Operating Temperature: -55°C ~ 150°C (TJ)

Power Rating: 180 W

IGBT Type: PT

Collector-Emitter Breakdown Voltage: 1200 V

Collector Current (Max): 36 A

Collector-Emitter Saturation Voltage (Max): 3.1 V @ 15 V, 16 A

Gate Charge: 51 nC

Collector Current Pulsed (Max): 80 A

Turn-on/off Delay Time: 16 ns / 150 ns

Product Advantages

High power density

Low conduction and switching losses

Robust and reliable performance

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 1200 V

Current Collector (Ic) (Max): 36 A

Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 16A

Gate Charge: 51 nC

Current Collector Pulsed (Icm): 80 A

Switching Energy: 920J (on), 560J (off)

Td (on/off) @ 25°C: 16ns/150ns

Quality and Safety Features

RoHS3 Compliant

Compatibility

TO-263-3, DPak (2 Leads + Tab), TO-263AB package

Application Areas

Power electronics

Motor drives

Inverters

Converters

Product Lifecycle

Currently available

No information on discontinuation or upgrades

Several Key Reasons to Choose This Product

High power density

Low conduction and switching losses

Robust and reliable performance

Excellent technical parameters for power electronics applications