Manufacturer Part Number
IXGF25N250
Manufacturer
IXYS Corporation
Introduction
The IXGF25N250 is a discrete semiconductor product from IXYS Corporation, specifically a Transistor - IGBT - Single.
Product Features and Performance
RoHS3 compliant
i4-Pac-5 (3 Leads) package
Operating temperature range of -55°C to 150°C
Power rating of 114 W
NPT IGBT type
Collector-Emitter breakdown voltage of 2500 V (max)
Collector current of 30 A (max)
Vce(on) of 5.2 V @ 15 V, 75 A
Gate charge of 75 nC
Collector pulsed current of 200 A
Product Advantages
High power handling capability
Wide operating temperature range
Excellent thermal performance
High voltage and current ratings
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 2500 V
Current Collector (Ic) (Max): 30 A
Vce(on) (Max) @ Vge, Ic: 5.2V @ 15V, 75A
Gate Charge: 75 nC
Current Collector Pulsed (Icm): 200 A
Quality and Safety Features
RoHS3 compliant
Robust ISOPLUS i4-PAC package
Compatibility
Through hole mounting
Application Areas
Power electronics
Motor drives
Inverters
Converters
Industrial applications
Product Lifecycle
The IXGF25N250 is an active product and is not nearing discontinuation.
Replacement or upgrade options may be available from IXYS Corporation.
Key Reasons to Choose This Product
High power handling capability
Wide operating temperature range
Excellent thermal performance
High voltage and current ratings
Robust and reliable ISOPLUS i4-PAC package
RoHS3 compliance
Suitability for a wide range of power electronics applications