Manufacturer Part Number
IXGA20N120A3
Manufacturer
IXYS Corporation
Introduction
This is a discrete semiconductor product, specifically a single transistor in the IGBT (Insulated Gate Bipolar Transistor) category.
Product Features and Performance
Operating temperature range: -55°C to 150°C (TJ)
Maximum power: 180 W
IGBT type: PT (Punch-Through)
Collector-Emitter Breakdown Voltage (max): 1200 V
Collector Current (max): 40 A
Collector-Emitter Saturation Voltage (max): 2.5 V @ 15 V, 20 A
Gate Charge: 50 nC
Pulsed Collector Current (max): 120 A
Switching Energy: 2.85 mJ (on), 6.47 mJ (off)
Turn-on/off delay time: 16 ns / 290 ns
Product Advantages
High voltage and current handling capability
Low on-state voltage drop
Fast switching speed
Wide operating temperature range
Key Technical Parameters
Voltage Rating: 1200 V
Current Rating: 40 A
Package: TO-263-3, DPak (2 Leads + Tab), TO-263AB
Quality and Safety Features
RoHS3 compliant
Reliable and durable construction
Compatibility
This IGBT transistor is designed for a wide range of industrial and power electronics applications.
Application Areas
Power supplies
Motor drives
Inverters
Welding equipment
Induction heating
Industrial automation
Product Lifecycle
This product is an active and currently available part from the manufacturer. No information about discontinuation or replacement is provided.
Key Reasons to Choose This Product
High voltage and current handling capability
Low on-state voltage drop for improved efficiency
Fast switching speed for high-frequency applications
Wide operating temperature range for versatile usage
Reliable and durable construction for long-lasting performance