IXGA20N120A3 - IXYS

Manufacturer Part Number

IXGA20N120A3

Manufacturer

IXYS Corporation

Introduction

This is a discrete semiconductor product, specifically a single transistor in the IGBT (Insulated Gate Bipolar Transistor) category.

Product Features and Performance

Operating temperature range: -55°C to 150°C (TJ)

Maximum power: 180 W

IGBT type: PT (Punch-Through)

Collector-Emitter Breakdown Voltage (max): 1200 V

Collector Current (max): 40 A

Collector-Emitter Saturation Voltage (max): 2.5 V @ 15 V, 20 A

Gate Charge: 50 nC

Pulsed Collector Current (max): 120 A

Switching Energy: 2.85 mJ (on), 6.47 mJ (off)

Turn-on/off delay time: 16 ns / 290 ns

Product Advantages

High voltage and current handling capability

Low on-state voltage drop

Fast switching speed

Wide operating temperature range

Key Technical Parameters

Voltage Rating: 1200 V

Current Rating: 40 A

Package: TO-263-3, DPak (2 Leads + Tab), TO-263AB

Quality and Safety Features

RoHS3 compliant

Reliable and durable construction

Compatibility

This IGBT transistor is designed for a wide range of industrial and power electronics applications.

Application Areas

Power supplies

Motor drives

Inverters

Welding equipment

Induction heating

Industrial automation

Product Lifecycle

This product is an active and currently available part from the manufacturer. No information about discontinuation or replacement is provided.

Key Reasons to Choose This Product

High voltage and current handling capability

Low on-state voltage drop for improved efficiency

Fast switching speed for high-frequency applications

Wide operating temperature range for versatile usage

Reliable and durable construction for long-lasting performance