Manufacturer Part Number
IXFX34N80
Manufacturer
IXYS Corporation
Introduction
High performance N-Channel MOSFET transistor
Product Features and Performance
800V drain-to-source voltage
Low on-state resistance of 240mΩ
34A continuous drain current
High power dissipation of 560W
Fast switching performance
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent power handling capability
Efficient heat dissipation
Reliable and durable
Suitable for high-voltage, high-power applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 800V
Gate-to-Source Voltage (Vgs): ±20V
On-State Resistance (Rds(on)): 240mΩ @ 17A, 10V
Continuous Drain Current (Id): 34A @ 25°C
Input Capacitance (Ciss): 7500pF @ 25V
Power Dissipation (Tc): 560W
Quality and Safety Features
RoHS3 compliant
TO-247-3 package for reliable thermal management
Compatibility
Suitable for a wide range of high-voltage, high-power applications
Application Areas
Switching power supplies
Motor drives
Industrial automation
Renewable energy systems
Product Lifecycle
Currently available
No plans for discontinuation
Replacement or upgrade options may be available
Key Reasons to Choose This Product
Excellent power handling and efficiency
Reliable and durable performance
Wide operating temperature range
Suitable for high-voltage, high-power applications
RoHS3 compliance for environmental safety
IXFX44N60IXYS CorporationMOSFET N-CH 600V 44A PLUS247