Manufacturer Part Number
IXFX30N100Q2
Manufacturer
IXYS Corporation
Introduction
High-performance N-Channel MOSFET transistor
Designed for various power electronics applications
Product Features and Performance
Very low on-resistance (Rds(on)) for high efficiency
High breakdown voltage (1000V) for high-voltage applications
High current handling capability (30A continuous at 25°C)
Fast switching speed and low gate charge for efficient operation
Wide operating temperature range (-55°C to 150°C)
Product Advantages
Excellent thermal management and power dissipation
Robust and reliable performance
Suitable for high-voltage, high-current power conversion applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 1000V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 400mΩ @ 15A, 10V
Continuous Drain Current (Id): 30A @ 25°C
Input Capacitance (Ciss): 8200pF @ 25V
Power Dissipation (Pc): 735W @ Tc
Quality and Safety Features
RoHS3 compliant
Robust and reliable design for industrial applications
Compatibility
Compatible with various power electronics systems and circuits
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Welding equipment
Industrial power electronics
Product Lifecycle
Current product, no discontinuation expected in the near future
Replacement and upgrade options available within the IXYS HiPerFET series
Key Reasons to Choose This Product
High efficiency and low power loss due to low on-resistance
Excellent high-voltage and high-current capabilities
Fast switching performance for efficient power conversion
Wide operating temperature range for diverse applications
Robust and reliable design for industrial usage
RoHS3 compliance for environmental sustainability
IXFX44N60IXYS CorporationMOSFET N-CH 600V 44A PLUS247