Manufacturer Part Number
IXFX27N80Q
Manufacturer
IXYS Corporation
Introduction
The IXFX27N80Q is a high-performance, N-channel MOSFET transistor designed for a wide range of power electronics applications.
Product Features and Performance
High drain-to-source voltage rating of 800V
Low on-state resistance of 320mOhm at 500mA, 10V
High continuous drain current of 27A at 25°C case temperature
Wide operating temperature range of -55°C to 150°C
Fast switching speed and low gate charge of 170nC at 10V
Robust and reliable design for demanding applications
Product Advantages
Excellent efficiency and thermal performance
Supports high voltage and high current operation
Suitable for various power conversion and control circuits
Proven reliability and long lifetime
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 800V
Gate-to-Source Voltage (Vgs): ±20V
On-State Resistance (Rds(on)): 320mOhm
Continuous Drain Current (Id): 27A
Input Capacitance (Ciss): 7600pF
Quality and Safety Features
RoHS3 compliant
PLUS247-3 package for enhanced thermal performance
Stringent quality control and reliability testing
Compatibility
The IXFX27N80Q is a direct replacement for many existing MOSFET transistors in power electronics applications.
Application Areas
Switch-mode power supplies
Motor drives
Inverters and converters
Industrial and commercial power electronics
Product Lifecycle
The IXFX27N80Q is currently in active production and not nearing discontinuation. Replacement and upgrade options are available if needed.
Key Reasons to Choose This Product
Excellent performance and efficiency for high voltage, high current applications
Proven reliability and long lifetime for demanding industrial environments
Broad compatibility and easy integration into existing designs
Comprehensive safety and quality features for critical applications