IXFX180N25T - IXYS

Manufacturer Part Number

IXFX180N25T

Manufacturer

IXYS Corporation

Introduction

High-performance N-channel MOSFET transistor in a TO-247-3 package. Designed for high-power applications.

Product Features and Performance

Trench MOSFET technology

Low on-resistance (12.9 mΩ typical)

High continuous drain current (180 A at 25°C)

Wide operating temperature range (-55°C to 150°C)

Low input capacitance (28,000 pF)

High voltage rating (250 V drain-to-source)

Product Advantages

Efficient power conversion and control

High current handling capability

Suitable for harsh environmental conditions

Reliable and robust performance

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 250 V

Gate-to-Source Voltage (Vgs): ±20 V

On-Resistance (Rds(on)): 12.9 mΩ @ 60 A, 10 V

Continuous Drain Current (Id): 180 A @ 25°C

Input Capacitance (Ciss): 28,000 pF @ 25 V

Power Dissipation (Pd): 1,390 W @ 25°C

Quality and Safety Features

RoHS3 compliant

Suitable for high-reliability applications

Compatibility

Designed for use in various power conversion and control systems

Application Areas

Switching power supplies

Motor drives

Inverters

Uninterruptible power supplies (UPS)

Industrial automation and control

Product Lifecycle

This product is currently in active production.

Replacement or upgrade options may be available in the future.

Key Reasons to Choose This Product

Excellent power handling capacity

Low conduction losses for improved efficiency

Suitable for harsh environments and high-reliability applications

Robust and reliable performance

Compatibility with a wide range of power conversion and control systems