IXFX180N10 - IXYS

Manufacturer Part Number

IXFX180N10

Manufacturer

IXYS Corporation

Introduction

High-performance N-channel MOSFET transistor designed for high-power, high-efficiency applications.

Product Features and Performance

High current rating up to 180A continuous at 25°C case temperature

Low on-resistance of 8 milliohms maximum at 90A, 10V gate-source voltage

Wide operating temperature range of -55°C to 150°C

High drain-source voltage rating of 100V

Fast switching speed and low gate charge of 390 nC at 10V

Product Advantages

Excellent for high-power, high-efficiency applications

Efficient power conversion and control

Reliable performance in demanding conditions

Key Technical Parameters

Drain-Source Voltage (Vdss): 100V

Gate-Source Voltage (Vgs): ±20V

On-Resistance (Rds(on)): 8 milliohms max. at 90A, 10V

Continuous Drain Current (ID): 180A at 25°C case temperature

Input Capacitance (Ciss): 10900 pF max. at 25V

Power Dissipation (Pd): 560W at 25°C case temperature

Quality and Safety Features

RoHS3 compliant

Reliable construction and packaging

Compatibility

Suitable for a wide range of high-power, high-efficiency applications, such as motor drives, power supplies, and industrial electronics.

Application Areas

Motor drives

Power supplies

Industrial electronics

Inverters

Servo drives

Product Lifecycle

This product is an active and widely used MOSFET transistor. Replacement or upgrade options are available from the manufacturer and other suppliers.

Key Reasons to Choose This Product

High current handling capability up to 180A

Extremely low on-resistance for efficient power conversion

Fast switching speed and low gate charge for high-frequency operation

Reliable performance in demanding temperature conditions

RoHS3 compliance for environmental responsibility