IXFX120N65X2 - IXYS

Manufacturer Part Number

IXFX120N65X2

Manufacturer

IXYS Corporation

Introduction

High-performance N-Channel power MOSFET transistor with ultra-low on-resistance and high drain-to-source voltage rating.

Product Features and Performance

Exceptionally low on-resistance (Rds(on)) of 24 mΩ

High drain-to-source voltage rating of 650 V

Continuous drain current up to 120 A at 25°C

Wide operating temperature range of -55°C to 150°C

Fast switching speed and high power density

Low gate charge for efficient switching

Product Advantages

Excellent efficiency and thermal management

Robust design for high-power applications

Reliable performance in harsh environments

Easy integration into power electronics systems

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 650 V

Gate-to-Source Voltage (Vgs): ±30 V

On-Resistance (Rds(on)): 24 mΩ @ 60 A, 10 V

Continuous Drain Current (Id): 120 A at 25°C

Input Capacitance (Ciss): 15,500 pF @ 25 V

Power Dissipation (Tc): 1,250 W

Quality and Safety Features

ROHS3 compliant

Excellent reliability and long lifespan

Designed and manufactured to high quality standards

Compatibility

Compatible with a wide range of power electronics applications

Application Areas

Switching power supplies

Motor drives

Inverters

Welding equipment

Industrial automation

Renewable energy systems

Product Lifecycle

Current product, not nearing discontinuation

Replacement and upgrade options available

Key Reasons to Choose This Product

Exceptional performance with ultra-low on-resistance

High voltage and current handling capabilities

Efficient and reliable operation in harsh environments

Ease of integration into power electronics systems

Proven track record of quality and safety