Manufacturer Part Number
IXFK120N65X2
Manufacturer
IXYS Corporation
Introduction
The IXFK120N65X2 is a high-performance, N-channel MOSFET transistor from IXYS Corporation. It is part of the HiPerFET and Ultra X2 series, designed for demanding power electronics applications.
Product Features and Performance
650V drain-to-source voltage (Vdss)
120A continuous drain current (Id)
24mOhm maximum on-resistance (Rds(on)) at 60A, 10V
Wide operating temperature range of -55°C to 150°C
Low input capacitance (Ciss) of 15,500pF at 25V
High power dissipation capability of 1,250W at Tc
Product Advantages
High efficiency and low switching losses
Robust and reliable performance
Suitable for high-voltage, high-current applications
Excellent thermal management capabilities
Key Technical Parameters
N-channel MOSFET technology
5V maximum gate-to-source threshold voltage (Vgs(th))
225nC maximum gate charge (Qg) at 10V
10V maximum drive voltage
Quality and Safety Features
RoHS3 compliant
TO-264AA package for secure mounting and heat dissipation
Compatibility
Suitable for a wide range of power electronics applications, including inverters, motor drives, and power supplies
Application Areas
Industrial electronics
Power conversion and management
Renewable energy systems
Automotive electronics
Product Lifecycle
The IXFK120N65X2 is an active product and is not nearing discontinuation.
Replacement or upgrade options may be available from IXYS Corporation.
Key Reasons to Choose This Product
Exceptional performance and efficiency
High reliability and ruggedness
Versatile compatibility with various power electronics applications
Comprehensive technical support and product lifecycle management from IXYS Corporation
