IXFK100N65X2 - IXYS

Manufacturer Part Number

IXFK100N65X2

Manufacturer

IXYS Corporation

Introduction

High-performance, ultra-low on-resistance N-channel MOSFET transistor

Product Features and Performance

High drain-source voltage up to 650V

Ultra-low on-resistance down to 30mΩ

High continuous drain current up to 100A

Wide operating temperature range from -55°C to 150°C

Low input capacitance of 11,300pF

High power dissipation capability up to 1,040W

Product Advantages

Excellent efficiency and power density

Reliable and robust performance

Suitable for high-voltage, high-current applications

Key Technical Parameters

Drain-Source Voltage (Vdss): 650V

Gate-Source Voltage (Vgs): ±30V

On-Resistance (Rds(on)): 30mΩ @ 50A, 10V

Continuous Drain Current (Id): 100A @ 25°C

Input Capacitance (Ciss): 11,300pF @ 25V

Power Dissipation (Pd): 1,040W @ Tc

Quality and Safety Features

RoHS3 compliant

TO-264 package for efficient heat dissipation

Compatibility

Suitable for a wide range of high-voltage, high-current power electronics applications

Application Areas

Switching power supplies

Motor drives

Inverters

Welding equipment

Industrial automation and control

Product Lifecycle

Current product, not nearing discontinuation

Replacement and upgrade options available

Several Key Reasons to Choose This Product

Excellent performance characteristics, including high voltage, low on-resistance, and high current handling

Robust and reliable design for demanding applications

Efficient thermal management with the TO-264 package

Wide operating temperature range for versatile use

RoHS3 compliance for environmental responsibility