Manufacturer Part Number
IXFK102N30P
Manufacturer
IXYS Corporation
Introduction
The IXFK102N30P is a high-performance N-channel power MOSFET from the HiPerFET series by IXYS Corporation. It is designed for a wide range of industrial and power electronics applications.
Product Features and Performance
High-voltage rating of 300V drain-source voltage
Low on-resistance of 33mΩ @ 500mA, 10V
High continuous drain current of 102A at 25°C
Wide operating temperature range of -55°C to 150°C
Fast switching capabilities with low gate charge of 224nC @ 10V
High power dissipation of 700W at 25°C
Product Advantages
Excellent performance-to-cost ratio
Suitable for high-power and high-voltage applications
Reliable and robust design for industrial environments
Easy integration into power electronics circuits
Key Technical Parameters
Drain-Source Voltage (Vdss): 300V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 33mΩ @ 500mA, 10V
Continuous Drain Current (Id): 102A at 25°C
Input Capacitance (Ciss): 7500pF @ 25V
Power Dissipation (Pd): 700W at 25°C
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high-quality standards
Compatibility
Compatible with standard TO-264-3 (TO-264AA) package
Suitable for a wide range of industrial and power electronics applications
Application Areas
Switching power supplies
Motor drives
Inverters and converters
Industrial automation and control systems
Welding equipment
Solar power systems
Product Lifecycle
Currently available and in production
No known plans for discontinuation
Replacement or upgrade options may be available from IXYS or other MOSFET manufacturers
Key Reasons to Choose This Product
High-voltage and high-current capabilities for demanding applications
Low on-resistance for improved efficiency
Reliable and robust design for industrial environments
Easy integration into power electronics circuits
Excellent performance-to-cost ratio
RoHS3 compliance for environmentally-conscious applications
IXFH90N20X3IXYSMOSFET N-CH 200V 90A TO247